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Diodes ZXM62N02E6 User Manual

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SUMMARY
V
(BR)DSS
=20V; R
DS(ON)
= 0.1V; I
D
=3.2A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilise a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM62N02E6TA 7 8mm embossed 3000 units
ZXM62N02E6TC 13 8mm embossed 10000 units
DEVICE MARKING
• 2N02
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SOT23-6
ZXM62N02E6
1
ISSUE 1 - JUNE 2004
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Summary of Contents

Page 1 - ZXM62N02E6

Top ViewSUMMARYV(BR)DSS=20V; RDS(ON)= 0.1V; ID=3.2ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that co

Page 2

ZXM62N02E6ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL LIMIT UNITDrain-Source Voltage VDSS20 VGate Source Voltage VGS± 12VContinuous Drain Current (VGS=

Page 3

0.1 10 1000.0001 0.1 1000 80 160VDS - Drain-Source Voltage (V)Safe Operating Area0.110100ID- Drain Current (A)DC1s100msD=0.1D=0.2Thermal Resistance (°

Page 4

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.STATICDrain-Source Breakdown Volt

Page 5

0.1 10012.540.1 10 100 0.2 0.8 1.620050-1000.1 10 100VDS- Drain-Source Voltage (V)Output Characteristics0.1100ID- Drain Current (A)VDS=10VID- Drain Cu

Page 6

ZXM62N02E6Basic Gate Charge WaveformGate Charge Test CircuitSwitching Time WaveformsSwitching Time Test Circuit0.1 10 100 0 4 VDS - Drain Source Volta

Page 7

ZXM62N02E6PACKAGE DIMENSIONSA12LDATUM AaCEAA2E1Db ee1PAD LAYOUT DETAILSDIM Millimetres InchesMin Max Min MaxA 0.90 1.45 0.35 0.057A1 0.00 0.15 0 0.006

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