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Diodes ZXMN2A14F User Manual

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1
SEMICONDUCTORS
SUMMARY
V
(BR)DSS
= 20V : R
DS
(
on
)=0.06 ; I
D
= 4.1A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
APPLICATIONS
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
DEVICE MARKING
•
214
ZXMN2A14F
ISSUE 3 - SEPTEMBER 2007
20V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN2A14FTA 7” 8mm 3000 units
ORDERING INFORMATION
PINOUT
S
O
T
2
3
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Summary of Contents

Page 1 - ZXMN2A14F

1SEMICONDUCTORSSUMMARYV(BR)DSS= 20V : RDS(on)=0.06 ; ID= 4.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure t

Page 2

ZXMN2A14FSEMICONDUCTORSISSUE 3 - SEPTEMBER 20072PARAMETER SYMBOL VALUE UNITJunction to Ambient(a)R⍜JA125 °C/WJunction to Ambient(b)R⍜JA82 °C/WNOTES(a)

Page 3

ZXMN2A14FSEMICONDUCTORSISSUE 3 - SEPTEMBER 20073CHARACTERISTICS

Page 4

ZXMN2A14FSEMICONDUCTORSISSUE 3 - SEPTEMBER 20074PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSSTATICDrain-Source Breakdown Voltage V(BR)DSS20 V ID=25

Page 5

ZXMN2A14FSEMICONDUCTORSISSUE 3 - SEPTEMBER 20075TYPICAL CHARACTERISTICS

Page 6

ZXMN2A14FSEMICONDUCTORSISSUE 3 - SEPTEMBER 20076TYPICAL CHARACTERISTICS

Page 7

ZXMN2A14FSEMICONDUCTORSISSUE 3 - SEPTEMBER 20077DefinitionsProduct changeZetex Semiconductors reserves the right to alter, without notice, specificati

Page 8

ZXMN2A14FSEMICONDUCTORS8ISSUE 3 - SEPTEMBER 2007EuropeZetex GmbHKustermannparkBalanstraße 59D-81541 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49)

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