Diodes ZXM62N03G User Manual download pdf

SUMMARY

(BR)DSS

= 30V: R

DS(on)

= 0.11 : I

= 4.7A

DESCRIPTION

This new generation of High Density MOSFETs from Zetex utilises a unique

structure that combines the benefits of low on-resistance with fast switching

speed.Thismakesthemidealforhighefficiency,lowvoltage,powermanagement

applications.

FEATURES

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

SOT223 package

APPLICATIONS

DC-DC Converters

Audio Output Stage

Relay and Soleniod driving

Motor Control

DEVICE MARKING

ZXM6

2N03

ZXM62N03G

ISSUE 1 - OCTOBER 2002

30V N-CHANNEL ENHANCEMENT MODE MOSFET

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXM62N03GTA 7” 12mm 1000 units

ZXM62N03GTC 13” 12mm 4000 units

ORDERING INFORMATION

Top View

1 2 3 4 5 6 7

ZXM62N03G 1

Summary of Contents

Page 1 - ZXM62N03G

SUMMARYV(BR)DSS= 30V: RDS(on)= 0.11 : ID= 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combin

Page 2

ZXM62N03GISSUE 1 - OCTOBER 20022PARAMETER SYMBOL LIMIT UNITDrain-Source Voltage VDSS30 VGate-Source Voltage VGS⫾20 VContinuous Drain Current (VGS=10V;

Page 3

ZXM62N03GISSUE 1 - OCTOBER 20023

Page 4

ZXM62N03GISSUE 1 - OCTOBER 20024PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.STATICDrain-Source Breakdown Voltage V(BR)DSS30 VID=250µA, VGS=0VZero

Page 5

ZXM62N03GISSUE 1 - OCTOBER 200250.1 10024 6.50.1 10 100 0.2 0.8 1.420050-1000.1 10 100VDS- Drain-Source Voltage (V)Output Characteristics0.1100ID- Dra

Page 6

ZXM62N03GISSUE 1 - OCTOBER 20026Basic Gate Charge WaveformGate Charge Test CircuitSwitching Time WaveformsSwitching Time Test Circuit0.1 10 100 0 4VDS

Page 7

ZXM62N03GISSUE 1 - OCTOBER 20027EuropeZetex plcFields New RoadChaddertonOldham, OL9 8NPUnited KingdomTelephone (44) 161 622 4422Fax: (44) 161 622 4420

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Diodes ZXM62N03G User Manual

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