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Diodes ZXMN2A01E6 User Manual

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SUMMARY
V
(BR)DSS
= 20V; R
DS(ON)
= 0.12 I
D
= 3.1A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23-6 package
APPLICATIONS
•
DC - DC Converters
•
Power management functions
•
Disconnect switches
•
Motor control
DEVICE MARKING
•
2A1
ZXMN2A01E6
ISSUE 3 - FEBRUARY 2006
1
20V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN2A01E6TA 7” 8mm 3000 units
ZXMN2A01E6TC 13” 8mm 10000 units
ORDERING INFORMATION
Top View
PINOUT
S
O
T
2
3
-
6
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1 2 3 4 5 6 7

Summary of Contents

Page 1 - ZXMN2A01E6

SUMMARYV(BR)DSS= 20V; RDS(ON)= 0.12 ID= 3.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the b

Page 2

ZXMN2A01E6ISSUE 3 - FEBRUARY 20062PARAMETER SYMBOL VALUE UNITJunction to Ambient (a)RθJA113 °C/WJunction to Ambient (b)RθJA70 °C/WNOTES(a) For a devic

Page 3

CHARACTERISTICSZXMN2A01E6ISSUE 3 - FEBRUARY 20063

Page 4

ZXMN2A01E6ISSUE 3 - FEBRUARY 20064PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.STATICDrain-Source Breakdown Voltage V(BR)DSS20 VID=250µA, VGS=0VZer

Page 5

ZXMN2A01E6ISSUE 3 - FEBRUARY 20065TYPICAL CHARACTERISTICS

Page 6

ZXMN2A01E6ISSUE 3 - FEBRUARY 200660.1 1 100200400CRSSCOSSCISSVGS=0Vf=1MHzC Capacitance (pF)VDS- Drain - Source Voltage (V)012340.00.51.01.52.02.53.03.

Page 7

ZXMN2A01E6ISSUE 3 - FEBRUARY 20067EuropeZetex GmbHStreitfeldstraße 19D-81673 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49europe.s

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