Diodes ZXMN3A01E6 User Manual
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SUMMARYV(BR)DSS= 30V; RDS(ON)= 0.12 ID= 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the b
ZXMN3A01E6ISSUE 2 - JULY 20022PARAMETER SYMBOL VALUE UNITJunction to Ambient (a)RθJA113 °C/WJunction to Ambient (b)RθJA70 °C/WNOTES(a) For a device su
ZXMN3A01E6ISSUE 2 - JULY 20023100m 1 1010m100m110Single PulseTamb=25°CRDS(on)Limited100µs1ms10ms100ms1sDCSafe Operating AreaICDrain Current (A)VDSColl
ZXMN3A01E6ISSUE 2 - JULY 20024PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.STATICDrain-Source Breakdown Voltage V(BR)DSS30 VID=250µA, VGS=0VZero Ga
ZXMN3A01E6ISSUE 2 - JULY 200250.1 1 100.11100.1 1 100.11102.0 2.5 3.0 3.5 4.0 4.5 5.00.1110-50 0 50 100 1500.40.60.81.01.21.41.60.1 1 100.110.4 0.6 0.
ZXMN3A01E6ISSUE 2 - JULY 200260.1 1 10050100150200250300CRSSCOSSCISSVGS=0Vf=1MHzC Capacitance (pF)VDS-Drain-SourceVoltage(V)012340246810ID=2.5AVDS=15V
ZXMN3A01E6ISSUE 2 - JULY 20027EuropeZetex plcFields New RoadChaddertonOldham, OL9 8NPUnited KingdomTelephone (44) 161 622 4422Fax: (44) 161 622 4420uk
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