Diodes ZTX603 User Manual download pdf

NPN SILICON PLANAR MEDIUM POWER

DARLINGTON TRANSISTORS

ISSUE 1  MARCH 94

FEATURES

* 80 Volt V

CEO

* 1 Amp continuous current

* Gain of 2K at I

=1 Amp

tot

= 1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL ZTX602 ZTX603 UNIT

Collector-Base Voltage V

CBO

80 100 V

Collector-Emitter Voltage V

CEO

60 80 V

Emitter-Base Voltage V

EBO

10 V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

amb

= 25°C

derate above 25°C

tot

5.7

mW/ °C

Operating and Storage Temperature Range T

stg

-55 to +200 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base

Breakdown Voltage

(BR)CBO

80 100 V

=100µA

Collector-Emitter

Breakdown Voltage

(BR)CEO

60 80 V I

=10mA*

Emitter-Base

Breakdown Voltage

(BR)EBO

10 10 V

=100µA

Collector Cut-Off

Current

CBO

0.01

µA

=60V

=80V

=60V,T =100°C

=80V,T =100°C

Emitter Cut-Off

Current

EBO

0.1 0.1

µA

=8V

Colllector-Emitter

Cut-Off Current

CES

µA

CES

=60V

CES

=80V

Collector-Emitter

Saturation Voltage

CE(sat)

1.0

=400mA,

=0.4mA*

=1A, I

=1mA*

Base-Emitter

Saturation Voltage

BE(sat)

1.8 1.8 V I

=1A, I

=1mA*

Base-Emitter

Turn-On Voltage

BE(on)

1.7 1.7 V IC=1A, V

=5V*

E-Line

TO92 Compatible

ZTX602

ZTX603

3-209

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Static Forward

Current Transfer

Ratio

0.5K

100K

0.5K

100K

=50mA, V

=5V

=500mA, V

=5V*

=1A, V

=5V*

=2A, V

=5V*

Transition Frequency f

150 150 MHz I

=100mA, V

=10V

f=20MHz

Input Capacitance C

ibo

90 Typical pF V

=500mV, f=1MHz

Output Capacitance C

obo

15 Typical pF V

=10V, f=1MHz

Switching Times t

0.5 Typical

µs

=500mA, V

=10V

=0.5mA

off

1.1 Typical

µs

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

The maximum permissible operational temperature can be obtained from this graph using

the following equation

( )

Power (max )

− Power (act )

0.0057

+25° C

amb(max )

= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for a

given V

and source resistance (R

)

Power(actual)= Actual power dissipation in users circuit

ZTX602

ZTX603

Voltage Derating Graph

- Collector-Emitter Voltage (Volts)

1.0

0.8

0.6

0.4

0.2

R = 50K

Ω

1 10 100

DC Conditions

R = 200K

Ω

R =

∞

Maximum Power Dissipation (W)

200

R = 1M

Ω

R = 10K

Ω

ZTX603

ZTX602

3-210

1 2 3

Summary of Contents

Page 1 - DARLINGTON TRANSISTORS

NPN SILICON PLANAR MEDIUM POWERDARLINGTON TRANSISTORSISSUE 1  MARCH 94FEATURES* 80 Volt VCEO* 1 Amp continuous current* Gain of 2K at IC=1 Amp*Ptot=

Page 2

NPN SILICON PLANAR MEDIUM POWERDARLINGTON TRANSISTORSISSUE 1  MARCH 94FEATURES* 80 Volt VCEO* 1 Amp continuous current* Gain of 2K at IC=1 Amp*Ptot=

Page 3 - TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS VCE(sat)v IC IC - Collector Current (Amps) VCE(sat) - (Volts)IC - Collector Current (Amps)VCE - Collector Voltage (Volts) Saf

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Diodes ZTX603 User Manual

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Summary of Contents

Related models: ZTX602

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