DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
1 of 6
www.diodes.com
October 2011
© Diodes Incorporated
DMN62D0LFB
ADVANCE INFORMATION
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= 25°C
60V
2 @ V
GS
= 4V
100mA
2.5 @ V
GS
= 2.5V
50mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN62D0LFB-7 NK 7 8 3,000
DMN62D0LFB-7B NK 7 8 10,000
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
X1-DFN1006-3
Bottom View Top View
Pin-Out
Source
Gate
Protection
Diode
Gate
Drai
Equivalent Circuit
ESD PROTECTED
D
S
G
NK = Product Type Marking Code
Top View
Dot Denotes Drain Side
DMN62D0LFB-7
Top View
Ba
Denotes Gate and Source Side
DMN62D0LFB-7B
NK NK
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