Diodes DMN65D8LFB User Manual download pdf

DMN65D8LFB

Document number: DS35449 Rev. 2 - 2

1 of 5

www.diodes.com

November 2011

DMN65D8LFB

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Product Summary

(BR)DSS

DS(ON)

= 25°C

60V

3.0 @ V

= 10V

400mA

4.0 @ V

= 5V

330mA

Description and Applications

These N-Channel enhancement mode field effect transistors are

produced using DIODES proprietary, high density, uses advanced

trench technology.These products have been designed to minimize

on-state resistance while provide rugged, reliable, and fast switching

performance.These products are particularly suited for low voltage,

low current applications such as small

• Load switching

Features and Benefits

• N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate, 1.2kV HBM

• Lead, Halogen and Antimony Free, RoHS Compliant

• "Green" Device (Notes 1 and 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMN65D8LFB-7 X1-DFN1006-3 3,000/Tape & Reel

DMN65D8LFB-7B X1-DFN1006-3 10,000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

ate Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

X1-DFN1006-3

Bottom View

Equivalent Circuit

Top View

Pin Configuration

ESD PROTECTED TO 1.2kV

Source

Body

Diode

Gate

Protection

Diode

Gate

Drai

X1 = Product Type Marking Code

Top View

Dot Denotes Drain Side

DMN65D8LFB-7B

DMN65D8LFB-7

Top View

Bar Denotes Gate and Source Side

1 2 3 4 5

Summary of Contents

Page 1 - ESD PROTECTED TO 1.2kV

DMN65D8LFB Document number: DS35449 Rev. 2 - 2 1 of 5 www.diodes.com November 2011© Diodes Incorporated DMN65D8LFBNEW PRODUCT N-CHANNEL ENHANCEMEN

Page 2

DMN65D8LFB Document number: DS35449 Rev. 2 - 2 2 of 5 www.diodes.com November 2011© Diodes Incorporated DMN65D8LFBNEW PRODUCT Maximum Ratings

Page 3 - NEW PRODUCT

DMN65D8LFB Document number: DS35449 Rev. 2 - 2 3 of 5 www.diodes.com November 2011© Diodes Incorporated DMN65D8LFBNEW PRODUCT 0.0 0.1 0.2 0.3 0.

DMN65D8LFB Document number: DS35449 Rev. 2 - 2 4 of 5 www.diodes.com November 2011© Diodes Incorporated DMN65D8LFBNEW PRODUCT 0.0010.010.110 0.

Page 5

DMN65D8LFB Document number: DS35449 Rev. 2 - 2 5 of 5 www.diodes.com November 2011© Diodes Incorporated DMN65D8LFBNEW PRODUCT IMPORTANT NOTIC

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Diodes DMN65D8LFB User Manual

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