Diodes DMN65D8LW User Manual download pdf

DMN65D8LW

Document number: DS35639 Rev. 4 - 2

1 of 5

www.diodes.com

July 2012

DMN65D8LW

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

Package

= +25°C

60V

3Ω @ V

= 10V

SOT323

300mA

4Ω @ V

= 5V

260mA

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• DC-DC Converters

• Power Management Functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate, 1KV (HBM)

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT323

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN65D8LW-7 SOT323 3000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

Pin Configuration

Equivalent Circuit

ESD PROTECTED TO 1kV

SOT323

Top View

Source

Gate

Protection

Diode

Gate

Drain

MM3 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

MM3

1 2 3 4 5

Summary of Contents

Page 1 - DMN65D8LW

DMN65D8LW Document number: DS35639 Rev. 4 - 2 1 of 5 www.diodes.com July 2012© Diodes Incorporated DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Pr

Page 2

DMN65D8LW Document number: DS35639 Rev. 4 - 2 2 of 5 www.diodes.com July 2012© Diodes Incorporated DMN65D8LW Maximum Ratings (@TA = +25°C, unl

Page 3

DMN65D8LW Document number: DS35639 Rev. 4 - 2 3 of 5 www.diodes.com July 2012© Diodes Incorporated DMN65D8LW 00.10.20.30.40.50.6012345V , DRAIN

DMN65D8LW Document number: DS35639 Rev. 4 - 2 4 of 5 www.diodes.com July 2012© Diodes Incorporated DMN65D8LW 0.0010.010.110 0.2 0.4 0.6 0.8 1.0

Page 5 - Suggested Pad Layout

DMN65D8LW Document number: DS35639 Rev. 4 - 2 5 of 5 www.diodes.com July 2012© Diodes Incorporated DMN65D8LW Suggested Pad Layout Please see

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