Diodes DMN65D8LDW User Manual

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DMN65D8LDW
Document number: DS35500 Rev. 6 - 2
1 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN65D8LDW
NEW PRODUCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Package
I
D
T
A
= +25°C
60V
8 @ V
GS
= 5V
SOT363
170mA
6 @ V
GS
= 10V
200mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN65D8LDW-7 SOT363 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018
Code U V W X Y Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
ESD PROTECTED TO 1kV
MM1 YM
MM1 YM
e3
MM1 YM
MM1 YM
MM1= Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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Summary of Contents

Page 1 - DMN65D8LDW

DMN65D8LDW Document number: DS35500 Rev. 6 - 2 1 of 6 www.diodes.com January 2014© Diodes Incorporated DMN65D8LDWNEW PRODUCT DUAL N-CHANNEL ENHANC

Page 2

DMN65D8LDW Document number: DS35500 Rev. 6 - 2 2 of 6 www.diodes.com January 2014© Diodes Incorporated DMN65D8LDWNEW PRODUCT Maximum Ratings (@TA

Page 3 - NEW PRODUCT

DMN65D8LDW Document number: DS35500 Rev. 6 - 2 3 of 6 www.diodes.com January 2014© Diodes Incorporated DMN65D8LDWNEW PRODUCT 00.10.20.30.

Page 4

DMN65D8LDW Document number: DS35500 Rev. 6 - 2 4 of 6 www.diodes.com January 2014© Diodes Incorporated DMN65D8LDWNEW PRODUCT 0.0010.010.

Page 5

DMN65D8LDW Document number: DS35500 Rev. 6 - 2 5 of 6 www.diodes.com January 2014© Diodes Incorporated DMN65D8LDWNEW PRODUCT Package Outline Dim

Page 6

DMN65D8LDW Document number: DS35500 Rev. 6 - 2 6 of 6 www.diodes.com January 2014© Diodes Incorporated DMN65D8LDWNEW PRODUCT IMPORTANT NOTICE D

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