Diodes DMN2004WK User Manual download pdf

DMN2004WK

Document number: DS30934 Rev. 5 - 2

1 of 6

www.diodes.com

September 2013

DMN2004W

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance: R

DS(ON)

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 ESD Protected up to 2KV

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT-323

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D

 Terminals: Finish  Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN2004WK-7 SOT-323 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT-323

TOP VIEW

ESD protected up to 2kV

Source

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Gate

Drain

TOP VIEW

NAB = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y̅ = Year (ex: A = 2013)

M = Month (ex: 9 = September)

NAB

Chengdu A/T Site

Shanghai A/T Site

1 2 3 4 5 6

Summary of Contents

Page 1 - DMN2004WK

DMN2004WK Document number: DS30934 Rev. 5 - 2 1 of 6 www.diodes.com September 2013© Diodes Incorporated DMN2004WK N-CHANNEL ENHANCEMENT MODE MOSFET

Page 2

DMN2004WK Document number: DS30934 Rev. 5 - 2 2 of 6 www.diodes.com September 2013© Diodes Incorporated DMN2004WK Maximum Ratings (@TA = +25°C, u

Page 3 - DMN2004W

DMN2004WK Document number: DS30934 Rev. 5 - 2 3 of 6 www.diodes.com September 2013© Diodes Incorporated DMN2004WK 0012345V , DRAIN-SOURCE VOLTAG

Page 4

DMN2004WK Document number: DS30934 Rev. 5 - 2 4 of 6 www.diodes.com September 2013© Diodes Incorporated DMN2004WK I , DRAIN CURRENT (A)Fig. 7 D

DMN2004WK Document number: DS30934 Rev. 5 - 2 5 of 6 www.diodes.com September 2013© Diodes Incorporated DMN2004WK Package Outline Dimensions Ple

Page 6

DMN2004WK Document number: DS30934 Rev. 5 - 2 6 of 6 www.diodes.com September 2013© Diodes Incorporated DMN2004WK IMPORTANT NOTICE DIODES INCORP

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