Diodes DMN2005K User Manual download pdf

DMN2005K

Document number: DS30734 Rev. 7 - 2

1 of 6

www.diodes.com

November 2013

DMN2005

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

 Low On-Resistance

 Very Low Gate Threshold Voltage, 0.9V Max.

 Fast Switching Speed

 Low Input/Output Leakage

 Ultra-Small Surface Mount Package

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 ESD Protected Gate

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020C

 Terminal Connections: See Diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Marking Information: See Page 3

 Ordering & Date Code Information: See Below

 Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN2005K-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012

Code T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ESD protected

TOP VIEW

Source

Body

Diode

Gate

Protection

Diode

Drain

uivalent Circuit

TOP VIEW

SOT23

DM = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: T = 2006

M = Month ex: 9 = September

1 2 3 4 5 6

Summary of Contents

Page 1 - DMN2005K

DMN2005K Document number: DS30734 Rev. 7 - 2 1 of 6 www.diodes.com November 2013© Diodes Incorporated DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EF

Page 2

DMN2005K Document number: DS30734 Rev. 7 - 2 2 of 6 www.diodes.com November 2013© Diodes Incorporated DMN2005K Maximum Ratings @TA = 25°C unles

DMN2005K Document number: DS30734 Rev. 7 - 2 3 of 6 www.diodes.com November 2013© Diodes Incorporated DMN2005K 00.51.01.52.001 2 345Fig. 1 Ty

Page 4 - T = 25°C

DMN2005K Document number: DS30734 Rev. 7 - 2 4 of 6 www.diodes.com November 2013© Diodes Incorporated DMN2005K 00.20.40.60.81.01.2Fig. 7 Gat

Page 5

DMN2005K Document number: DS30734 Rev. 7 - 2 5 of 6 www.diodes.com November 2013© Diodes Incorporated DMN2005K Package Outline Dimensions Pleas

Page 6

DMN2005K Document number: DS30734 Rev. 7 - 2 6 of 6 www.diodes.com November 2013© Diodes Incorporated DMN2005K IMPORTANT NOTICE DIODES INCORPO

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