DMN2020LSN
Document number: DS31946 Rev. 3 - 2
1 of 6
www.diodes.com
August 2011
© Diodes Incorporated
DMN2020LSN
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 2KV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SC-59
• Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.014 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage Continuous
V
GSS
±12 V
Continuous Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
6.9
4.5
A
Pulsed Drain Current (Note 4)
I
DM
30 A
Thermal Characteristics
Characteristic Symbol Value Units
Power Dissipation (Note 3)
P
D
0.61 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 3)
R
JA
204
°C /W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
SC-59
TOP VIEW
Pin Out Confi
uration
TOP VIEW
EQUIVALENT CIRCUIT
Source
Gate
Protection
Diode
Gate
Drain
D
G
S
ESD PROTECTED TO 2kV
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