Diodes DMN2005LPK User Manual download pdf

DMN2005LPK

Document number: DS30836 Rev. 9 - 2

1 of 6

www.diodes.com

June 2012

DMN2005LPK

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• ESD Protected Gate

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2005LPK-7 DM 7 8 3,000

DMN2005LPK-7B DM 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X1-DFN1006-3

Equivalent CircuitTop View

Internal Schematic

Bottom View

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

ESD PROTECTED

DM = Product Type Marking Code

DM DM

DMN2005LPK-7 DMN2005LPK-7B

Top View

Bar Denotes Gate

and Source Side

Top View

Dot Denotes

Drain Side

1 2 3 4 5 6

DMN2005LPK 1

Summary of Contents

Page 1 - DMN2005LPK

DMN2005LPK Document number: DS30836 Rev. 9 - 2 1 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK N-CHANNEL ENHANCEMENT MODE MOSFET F

Page 2

DMN2005LPK Document number: DS30836 Rev. 9 - 2 2 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK Maximum Ratings (@TA = 25°C unles

Page 3

DMN2005LPK Document number: DS30836 Rev. 9 - 2 3 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK 00.51.01.52.0012345Fig. 1 Typica

Page 4

DMN2005LPK Document number: DS30836 Rev. 9 - 2 4 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK 00.20.40.60.81.01.2Fig. 7 Gate

Page 5

DMN2005LPK Document number: DS30836 Rev. 9 - 2 5 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK 0.00001 0.0001 0.001 0.01 0.1 1 10

Page 6

DMN2005LPK Document number: DS30836 Rev. 9 - 2 6 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK IMPORTANT NOTICE DIODES INCORPO

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