Diodes ZXMHC3F381N8 User Manual download pdf

Issue 1.0 - March 2009 1

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ZXMHC3F381N8

30V SO8 Complementary enhancement mode MOSFET H-Bridge

Summary

Device V

(BR)DSS

DS(on)

= 25°C

N-CH 30V 9.0nC

33mΩ @ V

= 10V 5.0A

60mΩ @ V

= 4.5V 3.9A

P-CH -30V 12.7nC

55mΩ @ V

= -10V -4.1A

80mΩ @ V

= -4.5V -3.3A

Description

This new generation complementary MOSFET H-Bridge

features low on-resistance achievable with low gate drive.

Features

• 2 x N + 2 x P channels in a SOIC package

• Low voltage (V

= 4.5 V) gate drive

Applications

• DC Motor control

• DC-AC Inverters

Ordering information

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMHC3F381N8TC 13 12 2,500

Device marking

ZXMHC

3F381

P1S/P2S

N1S/N2S

P1G

P2G

N2G

N1G

P1D/N1D

P2D/N2D

1 2 3 4 5 6 ... 10 11

ZXMHC3F381N8 1

Summary of Contents

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ZXMHC3F381N8 Issue 1.0 - March 2009 5 © Diodes Incorporated

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ZXMHC3F381N8 Issue 1.0 - March 2009 6 © Diodes Incorporated

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ZXMHC3F381N8 Issue 1.0 - March 2009 9 © Diodes Incorporated

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