Diodes ZXMHC6A07N8 User Manual download pdf

Issue 1.0 - March 2009 1

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ZXMHC6A07N8

60V SO8 Complementary enhancement mode MOSFET H-Bridge

Summary

Device V

(BR)DSS

DS(on)

= 25°C

N-CH 60V 3.2nC

0.25Ω @ V

= 10V 1.8A

0.35Ω @ V

= 4.5V 1.5A

P-CH -60V 5.1nC

0.40Ω @ V

= -10V -1.4A

0.60Ω @ V

= -4.5V -1.2A

Description

This new generation complementary MOSFET H-Bridge

features low on-resistance achievable with low gate drive.

Features

• 2 x N + 2 x P channels in a SOIC package

Applications

• DC Motor control

• DC-AC Inverters

Ordering information

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMHC6A07N8TC 13 12 2,500

Device marking

ZXMHC

6A07

P1S/P2S

N1S/N2S

P1G P2G

N2G N1G

P1D/N1D

P2D/N2D

1 2 3 4 5 6 ... 10 11

ZXMHC6A07N8 1

Summary of Contents

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ZXMHC6A07N8 Issue 1.0 - March 2009 5 © Diodes Incorporated

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ZXMHC6A07N8 Issue 1.0 - March 2009 9 © Diodes Incorporated

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