SEMICONDUCTORSSUMMARYV(BR)DSS= 60V : RDS(on)= 0.3 ; ID= 1.6ADESCRIPTIONThis new generation of trench MOSFETs from Zetexutilizes a unique structure t
ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20042PARAMETER SYMBOL LIMIT UNITDrain-source voltage VDSS60 VGate-source voltage VGS±20 VContinuous drain curre
ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20043CHARACTERISTICS
ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20044PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSSTATICDrain-source breakdown voltage V(BR)DSS60 VID= 250A,
ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20045TYPICAL CHARACTERISTICS
ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20046TYPICAL CHARACTERISTICS
ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20047EuropeZetex GmbHStreitfeldstraße 19D-81673 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49
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