Diodes ZXMN3B14F User Manual
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1SEMICONDUCTORSSUMMARYV(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure tha
ZXMN3B14FSEMICONDUCTORSISSUE 2 - JANUARY 20062PARAMETER SYMBOL VALUE UNITJunction to Ambient(a)R⍜JA125 °C/WJunction to Ambient(b)R⍜JA83 °C/WNOTES(a) F
ZXMN3B14FSEMICONDUCTORSISSUE 2 - JANUARY 20063TYPICAL CHARACTERISTICS
ZXMN3B14FSEMICONDUCTORSISSUE 2 - JANUARY 20064PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSSTATICDrain-Source Breakdown Voltage V(BR)DSS30 V ID= 250
N-CHANNEL TYPICAL CHARACTERISTICSZXMN3B14FSEMICONDUCTORSISSUE 2 - JANUARY 20065
ZXMN3B14FSEMICONDUCTORSISSUE 2 - JANUARY 20066N-CHANNEL TYPICAL CHARACTERISTICS
ZXMN3B14FSEMICONDUCTORSISSUE 2 - JANUARY 20067EuropeZetex GmbHStreitfeldstraße 19D-81673 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 4
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