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Diodes FZT717 SOT223 User Manual

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Issue 2 - September 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
FZT717
SOT223 PNP medium power transistor
Summary
BV
CEO
= -12V; I
C
= 3A
Description
Packaged in the SOT223 outline this low saturation 12V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
Features
• 2W power dissipation
• 3A continuous current
• Excellent h
FE
characteristics up to 10A (pulsed)
• Low saturation voltage
Applications
• Battery charging
• MOSFET and IGBT gate driving
• Motor drive
Ordering information
Device marking
FZT717
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
FZT717TA 7 12 1,000
C
E
B
C
E
C
B
Pinout - top view
Page view 0
1 2 3 4 5 6

Summary of Contents

Page 1 - Pinout - top view

Issue 2 - September 2006 1 www.zetex.com© Zetex Semiconductors plc 2006FZT717SOT223 PNP medium power transistorSummaryBVCEO = -12V; IC = 3ADescription

Page 2 - Thermal resistance

FZT717Issue 2 - September 2006 2 www.zetex.com© Zetex Semiconductors plc 2006Absolute maximum ratingsNOTES:(a) For a device surface mounted on 25mm x

Page 3 - Typical characteristics

FZT717Issue 2 - September 2006 3 www.zetex.com© Zetex Semiconductors plc 2006Typical characteristics

Page 4

FZT717Issue 2 - September 2006 4 www.zetex.com© Zetex Semiconductors plc 2006Electrical characteristics (at Tamb = 25°C unless otherwise stated)Parame

Page 5

FZT717Issue 2 - September 2006 5 www.zetex.com© Zetex Semiconductors plc 2006Typical characteristics

Page 6 - Package outline - SOT223

FZT717Issue 2 - September 2006 6 www.zetex.com© Zetex Semiconductors plc 2006For international sales offices visit www.zetex.com/officesZetex products

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