Diodes FZT949 User Manual download pdf

SOT223 PNP SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE) TRANSISTORS

ISSUE 2 - NOVEMBER 1995

FEATURES

* Extremely low equivalent on-resistance; R

CE(sat)

* 6 Amps continuous current

* Up to 20 Amps peak current

* Very low saturation voltage

* Excellent h

characteristics specified upto 20 Amps

PARTMARKING DETAILS — DEVICE TYPE IN FULL

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL FZT948 FZT949 UNIT

Collector-Base Voltage V

CBO

-40 -50 V

Collector-Emitter Voltage V

CEO

-20 -30 V

Emitter-Base Voltage V

EBO

-6 V

Peak Pulse Current I

-20 A

Continuous Collector Current I

-6 -5.5 A

Power Dissipation at T

amb

=25°C P

tot

Operating and Storage Temperature

Range

:Tstg -55 to +150 °C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 4 square inch minimum

FZT948

FZT949

TBA

1 2 3 4 5

Summary of Contents

Page 1 - ABSOLUTE MAXIMUM RATINGS

SOT223 PNP SILICON PLANAR HIGH CURRENT(HIGH PERFORMANCE) TRANSISTORSISSUE 2 - NOVEMBER 1995FEATURES* Extremely low equivalent on-resistance; RCE(sat)

Page 2

FZT948ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-Base BreakdownVolt

Page 3

FZT948TBA

Page 4 - = 25°C)

FZT949ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-Base BreakdownVoltageV(BR)CBO-50 -80 VIC=-

Page 5 - TYPICAL CHARACTERISTICS

FZT9490.01 0.1 201101.00.80.60.400.21.61.41.21.00.80.60.400.21.61.41.21.00.80.60.400.21.61.41.20.01 0.1 201101.00.80.60.400.21.61.41.2TYPICAL CHARACTE

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Diodes FZT949 User Manual

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Summary of Contents

Related models: FZT948

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