Diodes FMMTL717 User Manual download pdf

SOT23 PNP SILICON PLANAR HIGH GAIN

MEDIUM POWER TRANSISTOR

ISSUE 1 – DECEMBER 1997

FEATURES

Very low equivalent on-resistance; R

CE(sat)

=160mΩ at 1.25A

COMPLEMENTARY TYPE – FMMTL617

PARTMARKING DETAIL – L77

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-12 V

Collector-Emitter Voltage V

CEO

-12 V

Emitter-Base Voltage V

EBO

-5 V

Continuous Collector Current I

-1.25 A

Peak Pulse Current I

-4 A

Base Current I

-200 mA

Power Dissipation at T

amb

=25°C P

tot

-500 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

FMMTL717

1 2 3

FMMTL717 1

Summary of Contents

Page 1 - FMMTL717

CBESOT23 PNP SILICON PLANAR HIGH GAINMEDIUM POWER TRANSISTORISSUE 1 – DECEMBER 1997FEATURESVery low equivalent on-resistance; RCE(sat)=160mΩ at 1.25AC

Page 2

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-Base Breakdown VoltageV(BR)CBO-12 -35 VIC=-100µ

Page 3

FMMTL7171m 101m 100m 101m 100m 100.110100m1m1m 100m 10IC - Collector Current (A)VCE(sat) v IC00.5VCE(sat)- (V)IC/IB=10IC/IB=20IC/IB=50+25°C-55°ChFE- T

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Diodes FMMTL717 User Manual

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Summary of Contents

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