Diodes FCX718 User Manual download pdf

SOT89 PNP SILICON POWER

(SWITCHING) TRANSISTOR

ISSSUE 1 - DECEMBER 1998

FEATURES

* 2W POWER DISSIPATION

* 6A Peak Pulse Current

* Excellent H

Characteristics up to 6Amps

* Extremely Low Saturation Voltage E.g. 16mv Typ.

* Extremely Low Equivalent On-resistance;

CE(sat)

96mΩ at 2.5A

Partmarking Detail - 718

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-20 V

Collector-Emitter Voltage V

CEO

-20 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current ** I

-6 A

Continuous Collector Current I

-2.5 A

Base Current I

-500 mA

Power Dissipation at T

amb

=25°C P

tot

1 †

2 ‡

Operating and Storage Temperature Range T

stg

-55 to +150 °C

† recommended P

tot

calculated using FR4 measuring 15x15x0.6mm

‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions for soldering surface mount components.

FCX718

1 2 3

Summary of Contents

Page 1 - (SWITCHING) TRANSISTOR

SOT89 PNP SILICON POWER(SWITCHING) TRANSISTORISSSUE 1 - DECEMBER 1998FEATURES* 2W POWER DISSIPATION* 6A Peak Pulse Current* Excellent HFE Characterist

Page 2

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-BaseBreakdown VoltageV(B

Page 3 - TYPICAL CHARACTERISTICS

1m1m1m1m1mIC- Collector Current (A)VCE(sat)v IC0IC/IB=10IC/IB=50IC/IB=100+25°C-55°C+100°C0IC - Collector Current (A)hFEv IC0IC - Collector Current (A)

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Diodes FCX718 User Manual

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