Diodes FCX1047A User Manual download pdf

SOT89 NPN SILICON POWER

(SWITCHING) TRANSISTOR

ISSSUE 2 - DECEMBER 1998

FEATURES

* 2W POWER DISSIPATION

* 20A Peak Pulse Current

* Excellent H

Characteristics up to 20 Amps

* Extremely Low Saturation Voltage E.g. 25mv Typ.

* Extremely Low Equivalent On-resistance;

CE(sat)

40mΩ at 4A

Complimentary Type - FCX1147A

Partmarking Detail - 047

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

35 V

Collector-Emitter Voltage V

CEO

10 V

Emitter-Base Voltage V

EBO

Peak Pulse Current ** I

20 A

Continuous Collector Current I

Power Dissipation at T

amb

=25°C P

tot

1 †

2 ‡

Operating and Storage Temperature Range T

stg

-55 to +150 °C

† recommended P

tot

calculated using FR4 measuring 15x15x0.6mm

‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions for soldering surface mount components.

FCX1047A

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FCX1047A 1

Summary of Contents

Page 1 - FCX1047A

SOT89 NPN SILICON POWER(SWITCHING) TRANSISTORISSSUE 2 - DECEMBER 1998FEATURES* 2W POWER DISSIPATION* 20A Peak Pulse Current* Excellent HFE Characteris

Page 2

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS.Collector-BaseBreakdown VoltageV(BR)C

Page 3

1m 10100m 100IC - Collector Current (A)VCE(sat) v IC0IC/IB=200IC/IB=100IC/IB=50+100°C+25°CIC- Collector Current (A)hFEv IC+25°C+100°C-55°CIC- Collecto