Diodes DMP3030SN User Manual download pdf

DMP3030SN

Document number: DS30787 Rev. 5 - 2

1 of 4

www.diodes.com

August 2011

DMP3030SN

NEW PRODUCT

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Lead Free By Design/RoHS Compliant (Note 2)

• ESD Protected Gate

• "Green" Device (Note 4)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SC59

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture sensitivity: Level 1 per J-STD-020C

• Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering & Date Code Information: See Page 3

• Weight: 0.014 grams (approximate)

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

DSS

-30 V

Gate-Source Voltage

GSS

±20

Drain Current (Note 1) Steady State

-0.7 A

Pulsed Drain Current (Note 3)

-2.8 A

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)

500 mW

Thermal Resistance, Junction to Ambient

250

°C/W

Operating and Storage Temperature Range

, T

STG

-65 to +150

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

DSS

-30

⎯ ⎯

= 0V, I

= -250µA

Zero Gate Voltage Drain Current

DSS

⎯ ⎯

-10

μA

= -30V, V

= 0V

Gate-Body Leakage

GSS

⎯ ⎯

±10 μA

= ±20V, V

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

(

)

-1.0

⎯

-3.0 V

= -10V, I

= -1.0mA

Static Drain-Source On-Resistance

DS (ON)

⎯

0.20

0.35

0.25

0.45

= -10V, I

= -0.4A

= -4.5V, I

= -0.4A

Forward Transfer Admittance

⎯

= -10V, I

= -0.4A

Diode Forward Voltage (Note 5)

⎯

-0.8 -1.1 V

= 0V, I

= -0.7A

DYNAMIC CHARACTERISTICS

Input Capacitance

iss

⎯

160

⎯

= -10V, V

= 0V

= 1.0MHz

Output Capacitance

oss

⎯

120

⎯

Reverse Transfer Capacitance

rss

⎯

SWITCHING CHARACTERISTICS

Turn-On Delay Time

(

)

⎯

= -10V, I

= -0.4A,

= -5.0V, R

GEN

= 50Ω

Turn-Off Delay Time

(

OFF

)

⎯

Turn-On Rise Time

⎯

Turn-Off Fall Time

⎯

Notes: 1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

SC59

TOP VIEW

Internal Schematic

ESD protected

Source

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Gate

Drain

1 2 3 4

Summary of Contents

Page 1 - DMP3030SN

DMP3030SN Document number: DS30787 Rev. 5 - 2 1 of 4 www.diodes.com August 2011© Diodes Incorporated DMP3030SNNEW PRODUCT P-CHANNEL ENHANCEMENT MO

Page 2 - NEW PRODUCT

DMP3030SN Document number: DS30787 Rev. 5 - 2 2 of 4 www.diodes.com August 2011© Diodes Incorporated DMP3030SNNEW PRODUCT Fig. 1 Typical Output

DMP3030SN Document number: DS30787 Rev. 5 - 2 3 of 4 www.diodes.com August 2011© Diodes Incorporated DMP3030SNNEW PRODUCT Fig. 8 Typical Total

Page 4

DMP3030SN Document number: DS30787 Rev. 5 - 2 4 of 4 www.diodes.com August 2011© Diodes Incorporated DMP3030SNNEW PRODUCT Suggested Pad Layout

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