DMP3035LSS
Document number: DS31443 Rev. 6 - 2
1 of 5
www.diodes.com
August 2009
© Diodes Incorporated
DMP3035LSS
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• 14mΩ @ V
GS
= -20V
• 18mΩ @ V
GS
= -10V
• 36mΩ @ V
GS
= -4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±25
V
Drain Current (Note 1) Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-11
-8
A
Pulsed Drain Current (Note 3)
I
DM
-80 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
P
D
2.0 W
Thermal Resistance, Junction to Ambient
R
JA
60 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Notes: 1. Device mounted on 1 in.
2
FR-4 board with 2 oz. Copper, in a still-air environment with T
A
= 25°C.
2. No purposefully added lead.
3. Repetitive rating, pulse width limited by junction temperature.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SO-8
TOP VIEW
TOP VIEW
Internal Schematic
S
D
D
G
D
D
S
S
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