Diodes DMP3065LVT User Manual

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DMP3065LVT
Document number: DS36697 Rev. 2 - 2
1 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMP3065LVT
ADVANCE INFORMATION
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
-30V
42m @ V
GS
= -10V
-4.9A
65m @ V
GS
= -4.5V
-3.7A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP3065LVT-7 TSOT26 3,000/Tape & Reel
DMP3065LVT-13 TSOT26 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Top View
Internal Schematic
ESD PROTECTE
D
TSOT26
1
2
3
6
5
4
DD
DD
GS
Equivalent Circuit
65P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T Site
Chengdu A/T Site
e3
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Summary of Contents

Page 1 - DMP3065LVT

DMP3065LVT Document number: DS36697 Rev. 2 - 2 1 of 6 www.diodes.com February 2014© Diodes Incorporated DMP3065LVTADVANCE INFORMATION P-CHANNEL E

Page 2 - P-Channel (@T

DMP3065LVT Document number: DS36697 Rev. 2 - 2 2 of 6 www.diodes.com February 2014© Diodes Incorporated DMP3065LVTADVANCE INFORMATION Maximum R

Page 3 - ADVANCE INFORMATION

DMP3065LVT Document number: DS36697 Rev. 2 - 2 3 of 6 www.diodes.com February 2014© Diodes Incorporated DMP3065LVTADVANCE INFORMATION 0.0

Page 4

DMP3065LVT Document number: DS36697 Rev. 2 - 2 4 of 6 www.diodes.com February 2014© Diodes Incorporated DMP3065LVTADVANCE INFORMATION 0.

Page 5

DMP3065LVT Document number: DS36697 Rev. 2 - 2 5 of 6 www.diodes.com February 2014© Diodes Incorporated DMP3065LVTADVANCE INFORMATION Package O

Page 6

DMP3065LVT Document number: DS36697 Rev. 2 - 2 6 of 6 www.diodes.com February 2014© Diodes Incorporated DMP3065LVTADVANCE INFORMATION IMPORTANT

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