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Diodes ZXTN2005Z User Manual

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SEMICONDUCTORS
SUMMARY
BV
CEO
= 25V : R
SAT
= 25m ; I
C
= 5.5A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 25V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
•
Extremely low equivalent on-resistance; R
SAT
= 25m at 6.5A
•
5.5 amps continuous current
•
Up to 20 amps peak current
•
Very low saturation voltages
•
Excellent h
FE
characteristics up to 20 amps
APPLICATIONS
•
Emergency lighting circuits
•
Motor driving (including DC fans)
•
Solenoid, relay and actuator drivers
•
DC modules
•
Backlight Inverters
DEVICE MARKING
869
ZXTN2005Z
ISSUE 2 - JUNE 2005
25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
1
S
O
T
8
9
PINOUT
TOP VIEW
DEVICE REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZXTN2005ZTA
7" 12mm
embossed
1,000 units
ORDERING INFORMATION
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1 2 3 4 5 6

Summary of Contents

Page 1 - ZXTN2005Z

SEMICONDUCTORSSUMMARYBVCEO= 25V : RSAT= 25m ; IC= 5.5ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 25V NPN transistoroffers extrem

Page 2

ZXTN2005ZSEMICONDUCTORSISSUE 2 - JUNE 20052PARAMETER SYMBOL LIMIT UNITCollector-base voltage BVCBO60 VCollector-emitter voltage BVCEO25 VEmitter-base

Page 3

ZXTN2005ZSEMICONDUCTORSISSUE 2 - JUNE 20053CHARACTERISTICS

Page 4

ZXTN2005ZSEMICONDUCTORSISSUE 2 - JUNE 20054PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSCollector-base breakdown voltage BVCBO60 120 V IC=100␮AColle

Page 5

ZXTN2005ZSEMICONDUCTORSISSUE 2 - JUNE 20055TYPICAL CHARACTERISTICS

Page 6

ZXTN2005ZSEMICONDUCTORS6ISSUE 2 - JUNE 2005EuropeZetex GmbHStreitfeldstraße 19D-81673 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 4

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