Diodes ZXTN25020DFL User Manual

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Issue 4 - January 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXTN25020DFL
20V, SOT23, NPN low power transistor
Summary
BV
CEX
> 100V
BV
CEO
> 20V
BV
ECO
> 5V
I
C(cont)
= 2A
I
CM
= 8A
V
CE(sat)
< 70mV @ 1A
R
CE(sat)
= 55m
P
D
= 350mW
Complementary part number ZXTP25020DFL
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
Features
High peak current
Low saturation voltage
100V forward blocking voltage
Applications
MOSFET and IGBT gate driving
DC-DC conversion
LED driving
Interface between low voltage IC's and loads
Ordering information
Device marking
1A1
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTN25020DFLTA 7 8 3,000
C
E
B
C
E
B
Pinout - top view
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1 2 3 4 5 6 7 8

Summary of Contents

Page 1 - ZXTN25020DFL

Issue 4 - January 2007 1 www.zetex.com© Zetex Semiconductors plc 2007ZXTN25020DFL20V, SOT23, NPN low power transistorSummary BVCEX > 100VBVCEO >

Page 2

ZXTN25020DFLIssue 4 - January 2007 2 www.zetex.com© Zetex Semiconductors plc 2007Absolute maximum ratingsNOTES:(a) For a device surface mounted on 25m

Page 3

ZXTN25020DFLIssue 4 - January 2007 3 www.zetex.com© Zetex Semiconductors plc 2007Characteristics

Page 4

ZXTN25020DFLIssue 4 - January 2007 4 www.zetex.com© Zetex Semiconductors plc 2007Electrical characteristics (at Tamb = 25°C unless otherwise stated)Pa

Page 5

ZXTN25020DFLIssue 4 - January 2007 5 www.zetex.com© Zetex Semiconductors plc 2007Typical characteristics

Page 6

ZXTN25020DFLIssue 4 - January 2007 6 www.zetex.com© Zetex Semiconductors plc 2007Package outline - SOT23Note: Controlling dimensions are in millimeter

Page 7

ZXTN25020DFLIssue 4 - January 2007 7 www.zetex.com© Zetex Semiconductors plc 2007 DefinitionsProduct changeZetex Semiconductors reserves the right to

Page 8

ZXTN25020DFLIssue 4 - January 2007 8 www.zetex.com© Zetex Semiconductors plc 2007

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