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Diodes ZXT13P12DE6 User Manual Page 1

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ISSUE 1 - DECEMBER 1999
ZXT13P12DE6
SuperSOT4™
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-12V; R
SAT
= 37m ;I
C
= -4A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
•
Extremely Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
h
FE
characterised up to 15A
•
I
C
=4A Continuous Collector Current
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT13P12DE6TA 7 8mm embossed 3000 units
ZXT13P12DE6TC 13 8mm embossed 10000 units
DEVICE MARKING
P12D
Top View
1
SOT23-6
C
E
B
C
C
C
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1 2 3 4 5 6

Summary of Contents

Page 1 - ZXT13P12DE6

ISSUE 1 - DECEMBER 1999ZXT13P12DE6SuperSOT4™12V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-12V; RSAT= 37m ;IC= -4ADESCRIPTIONThis new

Page 2

ISSUE 1 - DECEMBER 1999ZXT13P12DE6THERMAL RESISTANCEPARAMETER SYMBOL VALUE UNITJunction to Ambient (a) RθJA113 °C/WJunction to Ambient (b) RθJA73 °C/W

Page 3

ISSUE 1 - DECEMBER 1999ZXT13P12DE6100m 1 1010m100m110Single Pulse Tamb=25°C100µs1ms10ms100ms1sDCSafe Operating AreaICCollector Current (A)VCECollector

Page 4

ISSUE 1 - DECEMBER 1999ZXT13P12DE6ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.C

Page 5

ISSUE 1 - DECEMBER 1999ZXT13P12DE61m 10m 100m 1 101m10m100mVCE(SAT)vICTamb=25°CIC/IB=100IC/IB=50IC/IB=10VCE(SAT)(V)ICCollector Current (A)1m 10m 100m

Page 6 - ISSUE 1 - DECEMBER 1999

ISSUE 1 - DECEMBER 1999ZXT13P12DE6PACKAGE DIMENSIONS PAD LAYOUT DETAILS6Zetex plc.Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.Telepho

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