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Diodes ZXT12N20DX User Manual

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ISSUE 1 - MARCH 2000
ZXT12N20DX
SuperSOT4™
DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=20V; R
SAT
= 40m ;I
C
= 3.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
•
Extremely Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
h
FE
characterised up to 10A
•
I
C
=3.5A Continuous Collector Current
• MSOP8 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT12N20DXTA 7
12mm embossed
1000 units
ZXT12N20DXTC 13
12mm embossed 4000 units
DEVICE MARKING
T12N20DX
Top View
1
MSOP8
1
2
3
4
8
7
6
5
E1
E2
B1
B2
C1
C2
C2
C1
C1
E1
B1
C2
E2
B2
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1 2 3 4 5 6

Summary of Contents

Page 1 - ZXT12N20DX

ISSUE 1 - MARCH 2000ZXT12N20DXSuperSOT4™DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=20V; RSAT= 40m ;IC= 3.5ADESCRIPTIONThis ne

Page 2

ISSUE 1 - MARCH 2000ZXT12N20DXTHERMAL RESISTANCEPARAMETER SYMBOL VALUE UNITJunction to Ambient (a)(d) RθJA143 °C/WJunction to Ambient (b)(d) RθJA100 °

Page 3

ISSUE 1 - MARCH 2000ZXT12N20DX3CHARACTERISTICS

Page 4

ISSUE 1 - MARCH 2000ZXT12N20DXELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Colle

Page 5

ISSUE 1 - MARCH 2000ZXT12N20DX5TYPICAL CHARACTERISTICS

Page 6

ISSUE 1 - MARCH 2000ZXT12N20DXPACKAGE DIMENSIONSPAD LAYOUT DETAILS6Zetex plc.Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.Telephone: (

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