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Diodes ZXT10P12DE6 User Manual

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ZXT10P12DE6
ISSUE 1 - SEPTEMBER 2000
SuperSOT™
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-12V; R
SAT
= 65m ;I
C
= -3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
•
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
h
FE
characterised up to 10A
•
I
C
=3A Continuous Collector Current
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT10P12DE6TA 7 8mm embossed 3000 units
ZXT10P12DE6TC 13 8mm embossed 10000 units
DEVICE MARKING
717
Top View
1
SOT23-6
C
E
B
C
C
C
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1 2 3 4 5 6

Summary of Contents

Page 1 - ZXT10P12DE6

ZXT10P12DE6ISSUE 1 - SEPTEMBER 2000SuperSOT™12V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-12V; RSAT= 65m ;IC= -3ADESCRIPTIONThis new

Page 2

ISSUE 1 - SEPTEMBER 2000ZXT10P12DE6THERMAL RESISTANCEPARAMETER SYMBOL VALUE UNITJunction to Ambient (a) RθJA113 °C/WJunction to Ambient (b) RθJA73 °C/

Page 3

ISSUE 1 - SEPTEMBER 2000ZXT10P12DE6TYPICAL CHARACTERISTICS3

Page 4

ISSUE 1 - SEPTEMBER 2000ZXT10P12DE6ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Page 5

ISSUE 1 - SEPTEMBER 2000ZXT10P12DE65TYPICAL CHARACTERISTICS

Page 6

ISSUE 1 - SEPTEMBER 2000ZXT10P12DE6PACKAGE DIMENSIONS PAD LAYOUT DETAILS6Zetex plc.Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.Teleph

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