Diodes ZXMP7A17GQ User Manual download pdf (Page 2)

ZXMP7A17GQ

Document Number DS36688 Rev. 2 - 2

2 of 6

www.diodes.com

December 2013

ADVANCE INFORMATION

ZXMP7A17GQ

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Drain-Source Voltage

DSS

-70 V

Gate-Source Voltage

20

Continuous Drain Current

= 10V

(Note 7)

-3.7

= +70°C (Note 7)

-2.9

(Note 6) -2.6

Pulsed Drain Current

= 10V

(Note 8)

-9.6 A

Continuous Source Current (Body Diode) (Note 7)

-4.8 A

Pulsed Source Current (Body Diode) (Note 8)

-9.6 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Power Dissipation

Linear Derating Factor

(Note 6)

mW/C

(Note 7)

3.9

Thermal Resistance, Junction to Ambient

(Note 6)

θJA

62.5

C/W

(Note 7) 34

Operating and Storage Temperature Range

, T

STG

-55 to +150

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

DSS

 

= -250μA, V

= 0V

Zero Gate Voltage Drain Current

DSS

 

-1 µA

= -70V, V

= 0V

Gate-Source Leakage

GSS

 

100 nA

= 20V, V

= 0V

ON CHARACTERISTICS

Gate Threshold Voltage

(

)

-1

 

= -250µA, V

= V

Static Drain-Source On-Resistance (Note 9)

DS(ON)

 

0.16

Ω

= -10V, I

= -2.1A

0.25

= -4.5V, I

= -1.7A

Forward Transconductance (Notes 9 & 10)



4.4



= -15V, I

= -2.1A

Diode Forward Voltage (Note 9)



-0.85 -0.95 V

= -2A, V

= 0V

Reverse Recovery Time (Note 10)



29.8



= -2.1A, di/dt= 100A/µs

Reverse Recovery Charge (Note 10)



38.5



DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

iss



635



= -40V, V

= 0V

f= 1MHz

Output Capacitance

oss



Reverse Transfer Capacitance

rss



42.5



Total Gate Charge (Note 11)



9.6



= -5V

= -35V

= -2.1A

Total Gate Charge (Note 11)



= -10V

Gate-Source Charge (Note 11)



1.77



Gate-Drain Charge (Note 11)



3.66



Turn-On Delay Time (Note 11)

(

)



2.5



= -35V, V

= -10V

= -1A, R

 6Ω

Turn-On Rise Time (Note 11)



3.4



Turn-Off Delay Time (Note 11)

(

off

)



27.9



Turn-Off Fall Time (Note 11)



Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

7. Same as note (6), except the device is measured at t  5 sec.

8. Same as note (6), except the device is pulsed with D= 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.

9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%

10. For design aid only, not subject to production testing.

11. Switching characteristics are independent of operating junction temperatures.

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