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P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 100 Volt V

DS(on)

=8Ω

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

-100 V

Continuous Drain Current at T

amb

=25°C I

-230 mA

Pulsed Drain Current I

-3 A

Gate Source Voltage V

± 20

Power Dissipation at T

amb

=25°C P

tot

700 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

DSS

-100 V I

=-1mA, V

=0V

Gate-Source Threshold

Voltage

GS(th)

-1.5 -3.5 V ID=-1mA, V

= V

Gate-Body Leakage I

GSS

20 nA

=± 20V, V

=0V

Zero Gate Voltage Drain

Current

DSS

-1

-100

µA

=-100 V, V

=-80 V, V

=0V, T=125°C(2)

On-State Drain Current(1) I

D(on)

-750 mA V

=-25 V, V

=-10V

Static Drain-Source On-State

Resistance (1)

DS(on)

Ω

=-10V,I

=-375mA

Forward Transconductance

(1)(2)

125 mS V

=-25V,I

=-375mA

Input Capacitance (2) C

iss

100 pF

Common Source Output

Capacitance (2)

oss

35 pF V

=-25V, V

=0V, f=1MHz

Reverse Transfer

Capacitance (2)

rss

10 pF

Turn-On Delay Time (2)(3) t

d(on)

7ns

≈-25V, I

=-375mA

Rise Time (2)(3) t

15 ns

Turn-Off Delay Time (2)(3) t

d(off)

12 ns

Fall Time (2)(3) t

15 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

(2) Sample test.

(

)

hin

easu

Ω

sou

peda

ato

E-Line

TO92 Compatible

3-421

3-424

ZVP2110A

P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 100 Volt V

DS(on)

=8Ω

REFER TO ZVP2110A FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

-100 V

Continuous Drain Current at T

amb

=25°C I

-230 mA

Pulsed Drain Current I

-3 A

Gate Source Voltage V

± 20

Power Dissipation at T

amb

=25°C P

tot

700 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

DSS

-100 V I

=-1mA, V

=0V

Gate-Source Threshold

Voltage

GS(th)

-1.5 -3.5 V ID=-1mA, V

= V

Gate-Body Leakage I

GSS

20 nA

=± 20V, V

=0V

Zero Gate Voltage Drain

Current

DSS

-1

-100

µA

=-100 V, V

=-80 V, V

=0V, T=125°C(2)

On-State Drain Current(1) I

D(on)

-750 mA V

=-25 V, V

=-10V

Static Drain-Source On-State

Resistance (1)

DS(on)

Ω

=-10V,I

=-375mA

Forward Transconductance

(1)(2)

125 mS V

=-25V,I

=-375mA

Input Capacitance (2) C

iss

100 pF

Common Source Output

Capacitance (2)

oss

35 pF V

=-25V, V

=0V, f=1MHz

Reverse Transfer

Capacitance (2)

rss

10 pF

Turn-On Delay Time (2)(3) t

d(on)

7ns

≈-25V, I

=-375mA

Rise Time (2)(3) t

15 ns

Turn-Off Delay Time (2)(3) t

d(off)

12 ns

Fall Time (2)(3) t

15 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

(2) Sample test.

E-Line

TO92 Compatible

ZVP2110C

1 2 3

ZVP2110A 1
ZVP2110C 1

Summary of Contents

Page 1 - ZVP2110C

P-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 2 – MARCH 94FEATURES* 100 Volt VDS*RDS(on)=8ΩABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrai

Page 2

TYPICAL CHARACTERISTICSOutput Characteristics VDS - Drain Source Voltage (Volts) ID(On) - Drain Current (Amps)Transfer CharacteristicsNormalised RDS(o

Page 3

TYPICAL CHARACTERISTICSOutput Characteristics VDS - Drain Source Voltage (Volts) ID(On) - Drain Current (Amps)Transfer CharacteristicsNormalised RDS(o

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Diodes ZVP2110A User Manual

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Summary of Contents

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