Diodes ZXGD3003E6 User Manual download pdf

Issue 2 - October 2007 1 www.zetex.com

ZXGD3003E6

5A(peak) gate driver in SOT23-6

General description

The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A

into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation

delay times down to 2ns and rise/fall times down to 9ns this device ensures rapid switching of the power

MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications.

The ZXGD3003E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage range

allows full enhancement to minimize on-losses of the power MOSFET or IGBT.

Its low input voltage requirement and high current gain allows high current driving from low voltage

controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases

board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.

Features

• 40V operating voltage range

• 5 amps peak output current

• Fast switching emitter-follower configuration

• 2ns propagation delay time

• 19ns rise/fall time, 1000pF load

• Low input current requirement

• 1.6A(source)/1.4A(sink) output current from 10mA input

• SOT23-6 package

• Separate source and sink outputs for independent control of rise and fall time

• Optimized pin-out to ease board layout and minimize trace inductance

• No Latch Up

• No shoot through

• Near - Zero quiescent and output leakage current

Typical application circuit

GND

SINK

SOURCE

Input

ZXGD3003

1 2 3 4 5 6 7 8

ZXGD3003E6 1

Summary of Contents

Page 1 - ZXGD3003E6

Issue 2 - October 2007 1 www.zetex.com© Zetex Semiconductors plc 2007ZXGD3003E65A(peak) gate driver in SOT23-6General descriptionThe ZXGD3003E6 is a h

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ZXGD3003E6Issue 2 - October 2007 2 www.zetex.com© Zetex Semiconductors plc 2007ApplicationsPower MOSFET and IGBT Gate Driving in• Synchronous switch-m

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ZXGD3003E6Issue 2 - October 2007 3 www.zetex.com© Zetex Semiconductors plc 2007Absolute maximum ratingsThermal resistanceNOTES:(a) For a device surfac

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ZXGD3003E6Issue 2 - October 2007 4 www.zetex.com© Zetex Semiconductors plc 2007Electrical characteristics (at Tamb = 25°C unless otherwise stated).Swi

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ZXGD3003E6Issue 2 - October 2007 7 www.zetex.com© Zetex Semiconductors plc 2007SOT23-6 Package outlineNote: Controlling dimensions are in millimeters.

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ZXGD3003E6Issue 2 - October 2007 8 www.zetex.com© Zetex Semiconductors plc 2007Zetex sales officesEuropeZetex GmbHKustermann-parkBalanstraße 59D-81541

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