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SOT23 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 – DECEMBER 1995 ✪

FEATURES

* 200 Volt V

DS(on)

=25Ω

PARTMARKING DETAIL – MU

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

200 V

Continuous Drain Current at T

amb

=25°C I

60 mA

Pulsed Drain Current I

Gate-Source Voltage V

± 20

Power Dissipation at T

amb

=25°C P

tot

330 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

DSS

200 V I

=1mA, V

=0V

Gate-Source Threshold

Voltage

GS(th)

1.0 3.0 V I

=1mA, V

Gate-Body Leakage I

GSS

100 nA

=± 20V, V

=0V

Zero Gate Voltage

Drain Current

DSS

µA

=200V, V

=0V

=160V, V

=0V,

T=125°C

(2)

On-State Drain Current(1) I

D(on)

250 mA V

=25V, V

=10V

Static Drain-Source On-State

Resistance (1)

DS(on)

Ω

=10V,I

=100mA

Forward Transconductance(1)

(2)

75 mS V

=25V,I

=100mA

Input Capacitance (2) C

iss

45 pF

Common Source

Output Capacitance (2)

oss

18 pF V

=25V, V

=0V, f=1MHz

Reverse Transfer Capacitance

(2)

rss

5pF

Turn-On Delay Time (2)(3) t

d(on)

5ns

≈25V, I

=100mA

Rise Time (2)(3) t

7ns

Turn-Off Delay Time (2)(3) t

d(off)

6ns

Fall Time (2)(3) t

6ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

ZVN3320F

SOT23

3 - 398

ZVN3320F 1

Summary of Contents

Page 1 - ZVN3320F

SOT23 N-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 3 – DECEMBER 1995 ✪FEATURES* 200 Volt VDS*RDS(on)=25ΩPARTMARKING DETAIL – MUABSOLUTE MAXIMUM RA

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Diodes ZVN3320F User Manual

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