Diodes ZVN4210A User Manual download pdf

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 100 Volt V

DS(on)

= 1.5Ω

* Spice model available

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

100 V

Continuous Drain Current at T

amb

=25°C I

450 mA

Pulsed Drain Current I

Gate-Source Voltage V

± 20

Power Dissipation at T

amb

=25°C P

tot

700 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

DSS

100 V I

=1mA, V

=0V

Gate-Source Threshold

Voltage

GS(th)

0.8 2.4 V ID=1mA, V

= V

Gate-Body Leakage I

GSS

100 nA

=± 20V, V

=0V

Zero Gate Voltage Drain

Current

DSS

100

µA

=100V, V

=80V, V

=0V, T=125°C(2)

On-State Drain Current(1) I

D(on)

2.5 A V

=25V, V

=10V

Static Drain-Source On-State

Resistance (1)

DS(on)

1.5

1.8

Ω

=10V,I

=1.5A

=5V,I

=500mA

Forward Transconductance(1)(2

)

250 mS V

=25V,I

=1.5A

Input Capacitance (2) C

iss

100 pF

Common Source Output

Capacitance (2)

oss

40 pF V

=25V, V

=0V, f=1MHz

Reverse Transfer Capacitance

(2)

rss

12 pF

Turn-On Delay Time (2)(3) t

d(on)

4ns

≈25V, I

=1.5A

Rise Time (2)(3) t

8ns

Turn-Off Delay Time (2)(3) t

d(off)

20 ns

Fall Time (2)(3) t

30 ns

E-Line

TO92 Compatible

ZVN4210A

3-388

On-resistance v drain current

D-

Drain Current

(Amps)

RDS(on)-Drain Source On Resistance

(

Ω

)

0.1

1.0

3.5V

VGS=3V

10V

100

TYPICAL CHARACTERISTICS

Saturation Characteristics

VDS - Drain Source Voltage (Volts)

012345678910

nt (Amps)

Normalised R

DS(on)

and V

GS(th)

v Temperature

Tj-Junction Temperature (°C)

Normalised R

(

(th)

-50

-25 0 25 50 75

100

150

125 175 200

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.8

ourc

e R

tan

)

ate

resh

)

ID=1.5A

VGS=10V

ID=1mA

GS=

2.6

225

VGS=

10V

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

C-

ita

nce

(

pF)

40 60 80 100

120

160

200

Q-Charge (nC)

Gate

ce V

(

olts)

Gate charge v gate-source voltage

VDD=

20V

ID=1.5A

50V

3456

Transconductance v drain current

ID(on)- Drain Current (Amps)

-T

rans

ductance (mS)

100

200

400

300

500

345

VDS=10V

Coss

Ciss

Crss

80V

2.5V

3.5V

600

700

900

800

1000

ZVN4210A

3-389

1 2

ZVN4210A 1

Summary of Contents

Page 1 - ZVN4210A

N-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 2 – MARCH 94FEATURES* 100 Volt VDS*RDS(on)= 1.5Ω* Spice model availableABSOLUTE MAXIMUM RATINGS.PARAM

Page 2

N-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 2 – MARCH 94FEATURES* 100 Volt VDS*RDS(on)= 1.5Ω* Spice model availableABSOLUTE MAXIMUM RATINGS.PARAM

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Diodes ZVN4210A User Manual

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