DS30640 Rev. 3 - 2 1 of 4 MMDT3906VC
www.diodes.com Diodes Incorporated
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 4)
Features
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Last Page
• Ordering Information: See Last Page
• Weight: 0.003 grams (approximate)
MMDT3906VC
DUAL PNP SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5.0 V
Collector Current - Continuous
I
C
-200 mA
Power Dissipation (Note 3)
P
d
150
mW
Thermal Resistance, Junction to Ambient
R
θJA
833 °C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150 °C
SOT-563
Dim Min Max
Typ
A
0.15 0.30 0.25
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.56 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18
All Dimensions in mm
SEE NOTE 2
TCUDORP WEN
Notes: 1. No purposefully added lead.
2. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
Thermal Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
P
d
150
mW
Thermal Resistance, Junction to Ambient
R
θJA
833 °C/W
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