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Diodes ZXTP25040DFL User Manual

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Issue 3 - January 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXTP25040DFL
40V, SOT23, PNP low power transistor
Summary
BV
CEO
> -40V
BV
ECO
> -3V
I
C(cont)
= -1.5A
V
CE(sat)
< -115mV @ 1A
R
CE(sat)
= 82m⍀
P
D
= 350mW
Complementary part number ZXTN25040DFL
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
Features
• High peak current
• Low saturation voltage
• 40V forward blocking voltage
Applications
• MOSFET and IGBT gate driving
• Low power DC-DC conversion
Ordering information
Device marking
1A2
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTP25040DFLTA 7 8 3,000
C
E
B
C
E
B
Pinout - top view
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1 2 3 4 5 6 7 8

Summary of Contents

Page 1 - ZXTP25040DFL

Issue 3 - January 2007 1 www.zetex.com© Zetex Semiconductors plc 2007ZXTP25040DFL40V, SOT23, PNP low power transistorSummaryBVCEO > -40VBVECO >

Page 2

ZXTP25040DFLIssue 3 - January 2007 2 www.zetex.com© Zetex Semiconductors plc 2007Absolute maximum ratingsNOTES:(a) For a device surface mounted on 25m

Page 3

ZXTP25040DFLIssue 3 - January 2007 3 www.zetex.com© Zetex Semiconductors plc 2007Characteristics

Page 4

ZXTP25040DFLIssue 3 - January 2007 4 www.zetex.com© Zetex Semiconductors plc 2007Electrical characteristics (at Tamb = 25°C unless otherwise stated)Pa

Page 5

ZXTP25040DFLIssue 3 - January 2007 5 www.zetex.com© Zetex Semiconductors plc 2007Typical characteristics

Page 6

ZXTP25040DFLIssue 3 - January 2007 6 www.zetex.com© Zetex Semiconductors plc 2007Package outline - SOT23Note: Controlling dimensions are in millimeter

Page 7

ZXTP25040DFLIssue 3 - January 2007 7 www.zetex.com© Zetex Semiconductors plc 2007Intentionally left blank

Page 8

ZXTP25040DFLIssue 3 - January 2007 8 www.zetex.com© Zetex Semiconductors plc 2007Zetex sales officesEuropeZetex GmbHKustermann-parkBalanstraße 59D-815

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