Diodes DRD (xxxx) W User Manual download pdf

DRD (xxxx) W

COMPLEX ARRAY FOR RELAY DRIVERS

Features

• Epitaxial Planar Die Construction

• One Transistor and One Sw

itching Diode in One Package

• Lead Free By

Design/RoHS Compliant (Note 1)

• "Green" Dev

ice (Note 2)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic. "Green" Molding

Compound. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity

: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Alloy

42

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 8

• Ordering Information: See Page 8

• Weight: 0.008 grams (approximate)

P/N R1 (NOM) R2 (NOM)

DRDNB16W

DRDPB16W

DRDNB26W

DRDPB26W

1K

1K

220

220

10K

10K

4.7K

4.7K

SOT-363

Dim Min Max

A 0.10 0.30

B 1.15 1.35

C 2.00 2.20

D 0.65 Nominal

F 0.30 0.40

H 1.80 2.20

J

⎯

0.10

K 0.90 1.00

L 0.25 0.40

M 0.10 0.25

α

0°

8°

All Dimensions in mm

A

M

J

L

D

B C

H

K

F

R1

R2

R1

R2

DRDN010W/

DRDN005W

DRDP006W

DRDNB16W/

DRDNB26W

DRDPB16W/

DRDPB26W

Maximum Ratings, Total Device @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 3)

P

D

200 mW

Thermal Resistance, Junction to Ambient Air (Note 3)

R

θ

JA

625

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Maximum Ratings, DRDN010W NPN Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

45 V

Collector-Emitter Voltage

V

CEO

18 V

Emitter-Base Voltage

V

EBO

5 V

Collector Current (Note 3)

I

C

1000 mA

Maximum Ratings, DRDN005W NPN Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

80 V

Collector-Emitter Voltage

V

CEO

80 V

Emitter-Base Voltage

V

EBO

4.0 V

Collector Current – Continuous (Note 3)

I

C

500 mA

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on page 9 or our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS30573 Rev. 10 - 2

1 of 9

www.

diodes.com

DRD (xxxx) W

© Diodes Incorporated

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1 2 3 4 5 6 7 8 9

Summary of Contents

Page 1 - DRD (xxxx) W

DRD (xxxx) W COMPLEX ARRAY FOR RELAY DRIVERS Features • Epitaxial Planar Die Construction • One Transistor and One Switching Diode in One Package

Page 2

DS30573 Rev. 10 - 2 2 of 9 www.diodes.com DRD (xxxx) W © Diodes Incorporated Maximum Ratings, DRDP006W PNP Transistor @TA = 25°C unless othe

Page 3

DS30573 Rev. 10 - 2 3 of 9 www.diodes.com DRD (xxxx) W © Diodes Incorporated Electrical Characteristics, DRDN010W NPN Transistor @TA = 25°C

Page 4

DS30573 Rev. 10 - 2 4 of 9 www.diodes.com DRD (xxxx) W © Diodes Incorporated Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor @

Page 5 - Device Characteristics

Device Characteristics DS30573 Rev. 10 - 2 5 of 9 www.diodes.com DRD (xxxx) W © Diodes Incorporated 05010040200P, POWER DISSIPATION (mW)DT , AM

Page 6 - © Diodes Incorporated

1101001,000V, COLLECTOR-EMITTERSATURATION VOLTAGE (V)CE(SAT)I , COLLECTOR CURRENT (mA)Fig. 7, Typical Collector-Emitter Saturation Voltagevs. Col

Page 7

1101,000100110100h, D1,000C CURRENT GAINFEI , COLLECTOR CURRENT (mA)Fig. 13, Typical DC Current Gain vs.Collector Current (DRDP006W)CV = 5VCET =

Page 8 - (Switching Diode)

00.512.521.53010203040C, TOTAL CAPACITANCE (pF)TV , REVERSE VOLTAGE (V)Fig. 19, Typical Capacitance vs. Reverse Voltage(Switching Diode)Rf = 1MHz

Page 9 - Suggested Pad Layout

Sample Applications RelayDRDP006WR1R2RLRelayDRDNB16W1kΩ10kΩRL RelayDRDN010W/DRDN005WR1R2RLDS30573 Rev. 10 - 2 9 of 9 www.diode

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