Diodes LMN400E01 User Manual download pdf

LMN400E01

Document number: DS30750 Rev. 8 - 2

1 of 10

www.diodes.com

July 2011

LMN400E01

400mA LOAD SWITCH FEATURING PRE-BIASED

PNP TRANSISTOR AND ESD PROTECTED N-MOSFET

Features

• Voltage Controlled Small Signal Switch

• N-MOSFET with ESD Gate Protection

• Ideally Suited for Automated Assembly Processes

• Lead Free By Design/ROHS Compliant (Note 1)

• "Green" Device (Note 2)

Description

LMN400E01 is best suited for applications where the load needs to

be turned on and off using control circuits like micro-controllers,

comparators etc. particularly at a point of load. It features a discrete

pass transistor with stable V

CE(SAT)

which does not depend on input

voltage and can support continuous maximum current of 400 mA. It

also contains an ESD protected discrete N-MOSFET that can be used

as control. The component can be used as a part of a circuit or as a

stand alone discrete device.

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic. "Green Molding" Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL- STD -202, Method 208

• Marking Information: See Page 8

• Ordering Information: See Page 8

• Weight: 0.006 grams (approximate)

•

Reference

Device Type R1(NOM) R2(NOM) Figure

PNP

Transistor

10K

220 2

Q2 N-MOSFET

⎯ ⎯

Ordering Information (Note 3)

Device Packaging Shipping

LMN400E01-7 SOT363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013

Code T U V W X Y Z A

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT363

Top View

Internal Schematic

Top View

D_Q2

220

B_Q1

456

NMOS

10K

G_Q2

PNP

C_Q1

S_Q2

E_Q1

PM5 = Product Type Marking Code,

YM = Date Code Marking

Y = Year, e.g., Y = 2011

M = Month, e.g., 9 = September

PM5

1 2 3 4 5 6 7 8 9 10

Summary of Contents

Page 1 - LMN400E01

LMN400E01 Document number: DS30750 Rev. 8 - 2 1 of 10 www.diodes.com July 2011© Diodes Incorporated LMN400E01 400mA LOAD SWITCH FEATURING PRE-BIAS

Page 2

LMN400E01 Document number: DS30750 Rev. 8 - 2 10 of 10 www.diodes.com July 2011© Diodes Incorporated LMN400E01 IMPORTANT NOTICE DIODES INC

Page 3

LMN400E01 Document number: DS30750 Rev. 8 - 2 2 of 10 www.diodes.com July 2011© Diodes Incorporated LMN400E01 Maximum Ratings, Total Device @

Page 4 - Electrical Characteristics:

LMN400E01 Document number: DS30750 Rev. 8 - 2 3 of 10 www.diodes.com July 2011© Diodes Incorporated LMN400E01 Electrical Characteristics: Pre-Bi

Page 5

LMN400E01 Document number: DS30750 Rev. 8 - 2 4 of 10 www.diodes.com July 2011© Diodes Incorporated LMN400E01 Electrical Characteristics: ESD P

Page 6

LMN400E01 Document number: DS30750 Rev. 8 - 2 5 of 10 www.diodes.com July 2011© Diodes Incorporated LMN400E01 Pre-Biased PNP Transistor Characteri

Page 7

LMN400E01 Document number: DS30750 Rev. 8 - 2 6 of 10 www.diodes.com July 2011© Diodes Incorporated LMN400E01 Typical N-Channel MOSFET (ESD Prote

Page 8 - Application Details

LMN400E01 Document number: DS30750 Rev. 8 - 2 7 of 10 www.diodes.com July 2011© Diodes Incorporated LMN400E01 0T, JUNCTION TEMPERATURE ( C)Fig. 1

Page 9 - Suggested Pad Layout

LMN400E01 Document number: DS30750 Rev. 8 - 2 8 of 10 www.diodes.com July 2011© Diodes Incorporated LMN400E01 Application Details PNP Transist

Page 10

LMN400E01 Document number: DS30750 Rev. 8 - 2 9 of 10 www.diodes.com July 2011© Diodes Incorporated LMN400E01 Package Outline Dimensions

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Summary of Contents

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