Diodes DMP58D0LFB User Manual

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DMP58D0LFB
Document number: DS35206 Rev. 6 - 2
1 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMP58D0LFB
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Package
I
D
T
A
= +25°C
-50V
8 @ V
GS
= -5V
X1-DFN1006-3 -310A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected 1kV
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.001 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP58D0LFB-7 X1-DFN1006-3 3,000 / Tape & Reel
DMP58D0LFB-7B X1-DFN1006-3 10,000 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
X1-DFN1006-3
Bottom View
Top View
Pin-Out
Equivalent Circuit
ESD PROTECTED
D
S
G
Source
Gate
Protection
Diode
Gate
Drai
n
NZ = Product Type Marking Code
NZ
Top View
Dot Denotes Drain Side
Top View
Bar Denotes Gate
and Source Side
DMP58D0LFB-7 DMP58D0LFB-7B
NZ
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Summary of Contents

Page 1 - DMP58D0LFB

DMP58D0LFB Document number: DS35206 Rev. 6 - 2 1 of 6 www.diodes.com September 2012© Diodes Incorporated DMP58D0LFB P-CHANNEL ENHANCEMENT MODE MOS

Page 2

DMP58D0LFB Document number: DS35206 Rev. 6 - 2 2 of 6 www.diodes.com September 2012© Diodes Incorporated DMP58D0LFB Maximum Ratings (@TA = +25°C

Page 3

DMP58D0LFB Document number: DS35206 Rev. 6 - 2 3 of 6 www.diodes.com September 2012© Diodes Incorporated DMP58D0LFB V , DRAIN-SOURCE VOLTAGE (V)

Page 4

DMP58D0LFB Document number: DS35206 Rev. 6 - 2 4 of 6 www.diodes.com September 2012© Diodes Incorporated DMP58D0LFB T , AMBIENT TEMPERATURE (°C)

Page 5

DMP58D0LFB Document number: DS35206 Rev. 6 - 2 5 of 6 www.diodes.com September 2012© Diodes Incorporated DMP58D0LFB 0.0010.010.10.000001 0.0001

Page 6

DMP58D0LFB Document number: DS35206 Rev. 6 - 2 6 of 6 www.diodes.com September 2012© Diodes Incorporated DMP58D0LFB IMPORTANT NOTICE DIODES

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