Diodes DMN601K User Manual download pdf

DMN601K

Document number: DS30652 Rev. 8 - 2

1 of 5

www.diodes.com

August 2013

DMN601K

NEW PRODUCT

Source

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Gate

Drain

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance: R

DS(ON)

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 ESD Protected Up To 2kV

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN601K-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2005 2006 2007 2008 2009 2010 2011 2011 2012 2013 2014 2015 2016 2017

Code S T U V W X Y Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT23

Top View

Pin Out Configuration

ESD PROTECTED TO 2kV

K7K = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Shanghai A/T SiteChengdu A/T Site

K7K

1 2 3 4 5

Summary of Contents

Page 1 - DMN601K

DMN601K Document number: DS30652 Rev. 8 - 2 1 of 5 www.diodes.com August 2013© Diodes Incorporated DMN601KNEW PRODUCT SourceEQUIVALENT CIRCUIT Ga

Page 2

DMN601K Document number: DS30652 Rev. 8 - 2 2 of 5 www.diodes.com August 2013© Diodes Incorporated DMN601KNEW PRODUCT Maximum Ratings (@TA = +2

Page 3 - NEW PRODUCT

DMN601K Document number: DS30652 Rev. 8 - 2 3 of 5 www.diodes.com August 2013© Diodes Incorporated DMN601KNEW PRODUCT 00.20.40.60.81.0012345V

Page 4 - I , REVERSE DRAIN CURRENT (A)

DMN601K Document number: DS30652 Rev. 8 - 2 4 of 5 www.diodes.com August 2013© Diodes Incorporated DMN601KNEW PRODUCT Package Outline Dimens

Page 5 - Suggested Pad Layout

DMN601K Document number: DS30652 Rev. 8 - 2 5 of 5 www.diodes.com August 2013© Diodes Incorporated DMN601KNEW PRODUCT Suggested Pad Layout Ple

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