DMN601DMK
Document number: DS30657 Rev. 5 - 2
1 of 5
www.diodes.com
November 2011
© Diodes Incorporated
DMN601DM
NEW PRODUCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
60V
2.4 @ V
GS
= 10V
510mA
4.0 @ V
GS
= 4V
390mA
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 2kV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Analog Switch
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DMN601DMK-7 SOT26 3000/Tape & Reel
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT26
Top View
Top View
Internal Schematic
Equivalent Circuit
Per Element
S
1
D
1
D
2
S
2
G
1
G
2
Source
Body
Diode
Gate
Protection
Diode
Gate
Drai
K7K = Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
ESD PROTECTED TO 2kV
K7K YM
K7K YM
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