DMN3730UFB
Document number: DS35018 Rev. 3 - 2
1 of 6
www.diodes.com
March 2011
© Diodes Incorporated
DMN3730UFB
Product Line o
Diodes Incorporated
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= 25°C
30V
460mΩ @ V
GS
= 4.5V
0.9A
560mΩ @ V
GS
= 2.5V
0.7A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
• Portable applications
• Power Management Functions
Features and Benefits
• 0.5mm ultra low profile package for thin application
• 0.6mm
2
package footprint, 10 times smaller than SOT23
• Low V
GS(th),
can be driven directly from a battery
•
Low R
DS(on)
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2kV
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN3730UFB-7 NE 7 8 3,000
DMN3730UFB-7B NE 7 8 10,000
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DFN1006-3
Equivalent Circuit
Top View
Internal Schematic
Bottom View
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
ESD PROTECTED TO 2kV
NE = Product Type Marking Code
DMN3730UFB-7 DMN3730UFB-7B
Top View
Bar Denotes Gate
and Source Side
Top View
Dot Denotes
Drain Side
NENE
D
S
G
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