Diodes DMG1026UV User Manual

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DMG1026UV
Document number: DS35068 Rev. 6 - 2
1 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG1026UV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
60V
1.8 @ V
GS
= 10V
440mA
2.1 @ V
GS
= 4.5V
410mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
DC-DC Converters
Power Management Functions
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMG1026UV-7 SOT563 3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015 2016
Code W X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT563
Top View
Top View
Pin Definition/Schematic
Bottom View
ESD PROTECTED TO 2kV
UA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
UA1
YM
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Summary of Contents

Page 1 - DMG1026UV

DMG1026UV Document number: DS35068 Rev. 6 - 2 1 of 6 www.diodes.com February 2014© Diodes Incorporated DMG1026UVDUAL N-CHANNEL ENHANCEMENT MODE MOS

Page 2 - Thermal Characteristics

DMG1026UV Document number: DS35068 Rev. 6 - 2 2 of 6 www.diodes.com February 2014© Diodes Incorporated DMG1026UV Maximum Ratings (@TA = +25°C, unle

Page 3

DMG1026UV Document number: DS35068 Rev. 6 - 2 3 of 6 www.diodes.com February 2014© Diodes Incorporated DMG1026UV 00.20.40.60.81.001 23 45Figure 1 T

Page 4

DMG1026UV Document number: DS35068 Rev. 6 - 2 4 of 6 www.diodes.com February 2014© Diodes Incorporated DMG1026UV 00.20.40.60.81.01.21.41.6Figure 7

Page 5 - Suggested Pad Layout

DMG1026UV Document number: DS35068 Rev. 6 - 2 5 of 6 www.diodes.com February 2014© Diodes Incorporated DMG1026UV 0.001 0.01 0.1 1 10 100 1,000Figur

Page 6

DMG1026UV Document number: DS35068 Rev. 6 - 2 6 of 6 www.diodes.com February 2014© Diodes Incorporated DMG1026UV IMPORTANT NOTICE DIODES INCORPO

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