Diodes DMN3110S User Manual

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DMN3110S
Document number: DS31561 Rev. 3 - 2
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN3110S
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
30V
73m @ V
GS
= 10V 3.3A
110m @ V
GS
= 4.5V 2.7A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
Boost Application
Analog Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.027 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN3110S-7 SOT-23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
MN7 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
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Summary of Contents

Page 1 - DMN3110S

DMN3110S Document number: DS31561 Rev. 3 - 2 1 of 6 www.diodes.com October 2013© Diodes Incorporated DMN3110SNEW PRODUCT N-CHANNEL ENHANCEMENT MO

Page 2

DMN3110S Document number: DS31561 Rev. 3 - 2 2 of 6 www.diodes.com October 2013© Diodes Incorporated DMN3110SNEW PRODUCT Maximum Ratings (@TA =

Page 3 - NEW PRODUCT

DMN3110S Document number: DS31561 Rev. 3 - 2 3 of 6 www.diodes.com October 2013© Diodes Incorporated DMN3110SNEW PRODUCT V , DRAIN -SOURCE

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DMN3110S Document number: DS31561 Rev. 3 - 2 4 of 6 www.diodes.com October 2013© Diodes Incorporated DMN3110SNEW PRODUCT -50 -25 0 25 50

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DMN3110S Document number: DS31561 Rev. 3 - 2 5 of 6 www.diodes.com October 2013© Diodes Incorporated DMN3110SNEW PRODUCT Package Outline Dimens

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DMN3110S Document number: DS31561 Rev. 3 - 2 6 of 6 www.diodes.com October 2013© Diodes Incorporated DMN3110SNEW PRODUCT IMPORTANT NOTICE DIOD

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