DMN3051LDM
Document number: DS31523 Rev. 3 - 2
1 of 5
www.diodes.com
November 2009
© Diodes Incorporated
DMN3051LDM
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• 38 mΩ @ V
GS
= 10V
• 64 mΩ @ V
GS
= 4.5V
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.015 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Drain Current (Note 1)
I
D
4.0 A
Pulsed Drain Current (Note 1)
I
DM
16 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 1)
P
D
900 mW
Thermal Resistance, Junction to Ambient
R
JA
139 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SOT-26
TOP VIEW
Internal Schematic
TOP VIEW
G
S
D
D
D
D
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