Diodes DMN2100UDM User Manual

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DMN2100UDM
Document number: DS31186 Rev. 5 - 2
1 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN2100UDM
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
20V
55mΩ @ V
GS
= 4.5V
4.0A
70m @ V
GS
= 2.5V
3.5A
90m @ V
GS
= 1.8V
3.1A
130m @ V
GS
= 1.5V
2.5A
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
General Purpose Interfacing Switch
Power Management Functions
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN2100UDM-7 SOT26 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com..
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT26
2N1 = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
2N1
YM
Top View
Internal Schematic
G
S
D
D
D
D
ESD PROTECTED
Top View
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Summary of Contents

Page 1 - DMN2100UDM

DMN2100UDM Document number: DS31186 Rev. 5 - 2 1 of 6 www.diodes.com May 2012© Diodes Incorporated DMN2100UDMNEW PRODUCT N-CHANNEL ENHANCEMENT MOD

Page 2

DMN2100UDM Document number: DS31186 Rev. 5 - 2 2 of 6 www.diodes.com May 2012© Diodes Incorporated DMN2100UDMNEW PRODUCT Maximum Ratings @TA =

Page 3 - NEW PRODUCT

DMN2100UDM Document number: DS31186 Rev. 5 - 2 3 of 6 www.diodes.com May 2012© Diodes Incorporated DMN2100UDMNEW PRODUCT 02468 I , DRAIN CURREN

Page 4

DMN2100UDM Document number: DS31186 Rev. 5 - 2 4 of 6 www.diodes.com May 2012© Diodes Incorporated DMN2100UDMNEW PRODUCT 0.20.40.60.81.21.41.0

Page 5 - © Diodes Incorporated

DMN2100UDM Document number: DS31186 Rev. 5 - 2 5 of 6 www.diodes.com May 2012© Diodes Incorporated DMN2100UDMNEW PRODUCT Package Outline Dime

Page 6

DMN2100UDM Document number: DS31186 Rev. 5 - 2 6 of 6 www.diodes.com May 2012© Diodes Incorporated DMN2100UDMNEW PRODUCT IMPORTANT NOTICE DI

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