Diodes DMN2400UFB User Manual download pdf

DMN2400UFB

Document number: DS31963 Rev. 3 - 2

1 of 6

www.diodes.com

April 2012

DMN2400UFB

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

max

= 25°C

20V

0.55 @ V

= 4.5V

0.75A

0.75 @ V

= 2.5V

0.63A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Battery Charging

• Power Management Functions

• DC-DC Converters

• Portable Power Adaptors

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected up to 1.5kV

• Lead-Free Finish; RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: Collector Dot

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMN2400UFB-7 X1-DFN1006-3 3,000/Tape & Reel

DMN2400UFB-7B X1-DFN1006-3 10,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X1-DFN1006-3

Top View

Package Pin Configuration

Bottom View

ESD PROTECTED TO 1.5kV

NB = Product Type Marking Code

Dot Denotes Drain Side

Source

Gate

Protection

Diode

Gate

Drain

Equivalent Circuit

1 2 3 4 5 6

Summary of Contents

Page 1 - DMN2400UFB

DMN2400UFB Document number: DS31963 Rev. 3 - 2 1 of 6 www.diodes.com April 2012© Diodes Incorporated DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET

Page 2

DMN2400UFB Document number: DS31963 Rev. 3 - 2 2 of 6 www.diodes.com April 2012© Diodes Incorporated DMN2400UFB Maximum Ratings @TA = 25°C unles

Page 3

DMN2400UFB Document number: DS31963 Rev. 3 - 2 3 of 6 www.diodes.com April 2012© Diodes Incorporated DMN2400UFB 00.51.01.52.0012345Fig.

Page 4

DMN2400UFB Document number: DS31963 Rev. 3 - 2 4 of 6 www.diodes.com April 2012© Diodes Incorporated DMN2400UFB 00.20.40.60.81.01.2Fig. 7 Gate T

Page 5 - Suggested Pad Layout

DMN2400UFB Document number: DS31963 Rev. 3 - 2 5 of 6 www.diodes.com April 2012© Diodes Incorporated DMN2400UFB Package Outline Dimensions

Page 6

DMN2400UFB Document number: DS31963 Rev. 3 - 2 6 of 6 www.diodes.com April 2012© Diodes Incorporated DMN2400UFB IMPORTANT NOTICE DIODES INCO

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