POWERDI is a registered trademark of Diodes Incorporated.
DMN2028UFDH
Document number: DS35805 Rev. 5 - 2
2 of 6
www.diodes.com
January 2013
© Diodes Incorporated
DMN2028UFDH
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage (Note 5)
V
GSS
±12 V
Continuous Drain Current (Note 7) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.8
5.8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
8.8
7.0
A
Maximum Body Diode Forward Current (Note 7)
I
S
2 A
Pulsed Drain Current (10μs pulse, Duty cycle = 1%)
I
DM
40 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
P
D
1.1 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ
JA
118
°C/W
t<10s 72
Total Power Dissipation (Note 7)
P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
R
θ
JA
82
°C/W
t<10s 50
Thermal Resistance, Junction to Case (Note 7)
R
JC
14
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1 µA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±10 µA
V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
th
0.5 — 1 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
16 20
mΩ
V
GS
= 10V, I
D
= 4A
17 22
V
GS
= 4.5V, I
D
= 4A
19 26
V
GS
= 2.5V, I
D
= 4A
24 36
V
GS
= 1.8V, I
D
= 4A
Forward Transfer Admittance
|Y
fs
|
— 8 — S
V
DS
= 5V, I
D
= 12A
Diode Forward Voltage
V
SD
— 0.7 1.0 V
V
GS
= 0V, I
S
= 5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 151 —
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 91 —
pF
Reverse Transfer Capacitance
C
rss
— 32 —
pF
Gate Resistance
R
— 200 —
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
— 8.5 —
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6.5A
Gate-Source Charge
Q
s
— 1.6 —
nC
Gate-Drain Charge
Q
d
— 2.8 —
nC
Turn-On Delay Time
t
D
on
—
53
— ns
V
GS
= 10V, V
DS
= 4.5V,
R
G
= 6Ω, R
L
= 1.0 Ω, I
D
= 1A
Turn-On Rise Time
t
—
77
— ns
Turn-Off Delay Time
t
D
off
—
561
— ns
Turn-Off Fall Time
t
f
—
234
— ns
Notes: 5. AEC-Q101 V
GS
maximum is ±9.6V.
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
(8 pages)
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